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triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGA2525 october 2008 ? rev d datasheet subject to change without notice. primary applications product description key features measured performance 2-18 ghz low noise amplifier with agc ? chip dimensions: 2.09 x 1.35 x 0.1 mm ? technology: 3mi 0.15 um power phemt ? bias: vd = 5 v, id = 75 ma, vg1 = -0.6 v, vg2 = +1.3 v, typical ? esd protection circuitry on vg1 & vg2 ? 22 dbm nominal psat, 18 dbm nominal p1db ? toi: 29 dbm typical ? >30 db adjustable gain with vg2 ? midband nf: 2 db ? gain: 17 db ? frequency range: 2 - 18 ghz ? electronic warfare applications ? x-ku point to point radio ? wideband gain block / lna the triquint TGA2525 is a compact lna gain block mmic with adjustable gain control (agc). the lna operates from 2-18 ghz and is designed using triquint?s proven standard 0.15 um power phemt production process. the TGA2525 provides a nominal 18 dbm of output power at 1 db gain compression with a small signal gain of 17 db. greater than 30 db adjustable gain can be achieved using vg2 pin. typical noise figure is 2 db at 8 ghz. special circuitry on both vg1 and vg2 pins provides esd protection. the TGA2525 is suitable for a variety of wideband systems such as point to point radios, radar warning receivers and electronic counter measures. the TGA2525 is 100% dc and rf tested on-wafer to ensure performance compliance. the TGA2525 has a protective surface passivation layer providin g environmental robustness. lead-free & rohs compliant. evaluation boards are available upon request. bias conditions: vd = 5 v, id = 75 ma, vg1 = -0.6 v, vg2 = +1.3 v typical 0 1 2 3 4 5 6 7 8 9 10 2 4 6 8 10 12 14 16 18 frequency (ghz) nf (db) 0 2 4 6 8 10 12 14 16 18 20 gain (db) nf gain -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) gain, irl, orl (db) gain irl orl www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGA2525 october 2008 ? rev d table ii recommended operating conditions table i absolute maximum ratings 1/ 2/ 22 dbm input continuous wave power pin 3/ -24 to 24 ma -24 to 24 ma gate #1 current range gate #2 current range ig1 ig2 2/ 144 ma drain current id -2 to 0 v -2 to +3 v gate #1 voltage range gate #2 voltage range vg1 vg2 2/ 7 v drain voltage vd 10 v drain to gate voltage vd-vg notes value parameter symbol 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, an d functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current, i nput power, and output power shall not exceed the maximum power dissipation listed in table iv. 3/ esd protection diodes on both vg1 and vg2 will co nduct current for voltages approaching turn-on voltages. diode turn-on voltage levels will decrea se with decreasing temperature. -0.6 v 1.3 v gate #1 voltage gate #2 voltage vg1 vg2 130 ma drain current under rf drive id_drive 75 ma drain current id 5 v drain voltage vd value parameter 1/ symbol 1/ see assembly diagram for bias instructions. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGA2525 october 2008 ? rev d table iii rf characterization table bias: vd = 5 v, id = 75 ma, vg1 = -0.6 v, vg2 = +1. 3 v typical - 46 -- -- - - - -- -- - -- max - -- -- 14 15 13 11 -- 9 10 8.5 10 10 14 14 min db / c -0.008 f = 2 - 18 ghz s21 temperature dependence s21/t db 24 f = 2 - 14 ghz f = 14 - 18 ghz noise figure nf dbm 29 25 f = 2 - 14 ghz f = 14 ? 18 ghz output toi toi dbm 18 17 17 15 f = 2 ghz f = 4, 8 ghz f = 10, 14 ghz f = 18 ghz output power @ 1db compression p1db dbm 22 20 f = 2 - 14 ghz f = 14 ? 18 ghz saturated output power psat db 15 15 f = 2 - 3 ghz f = 4 - 18 ghz output return loss orl db 15 15 12 f = 2 ghz f = 3 - 14 ghz f = 14 - 18 ghz input return loss irl db 17 17 f = 2 -14 ghz f = 14 - 18 ghz small signal gain gain units nominal test conditions parameter symbol www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGA2525 october 2008 ? rev d table iv power dissipation and thermal properties power de-rating curve 1/ for a median life of 1e+6 hours, power dissipati on is limited to pd(max) = (150 c ? tbase c)/ jc. 2/ channel operating temperature will directly affec t the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. -65 to 150 c storage temperature 320 c 30 seconds mounting temperature jc = 41.4 (c/w) tchannel = 89 c tm = 2.7 e+9 hrs vd = 5 v id = 120 ma pout = 22 dbm pd = 0.45 w thermal resistance, jc under rf drive jc = 41.4 (c/w) tchannel = 86 c tm = 4.3 e+9 hrs vd = 5 v id = 75 ma pd = 0.375 w thermal resistance, jc 1/ 2/ pd = 1.01 w tchannel = 96 c tm = 9.7 e+8 hrs tbaseplate = 70 c maximum power dissipation notes value test conditions parameter 0 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 baseplate temp (c) power dissipation (w) www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGA2525 october 2008 ? rev d measured data bias conditions: vd = 5 v, id = 75 ma, vg1 = -0.6 v, vg2 = +1.3 v typical 0 5 10 15 20 25 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) gain (db) -40 -30 -20 -10 0 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) input rl and output rl (db) irl orl www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGA2525 october 2008 ? rev d measured data -20 -10 0 10 20 30 0 5 10 15 20 freq (ghz) s21 (db) id = 75 ma, vg2= +1.3 v id = 40.6 ma, vg2= -0.42 v id = 29.7 ma, vg2= -0.64 v id = 22.2 ma, vg2= -0.73 v id = 16.2 ma, vg2= -0.8 v id = 11.4 ma, vg2= -0.85 v id = 7.7 ma, vg2= -0.89 v id = 5 ma, vg2= -0.93 v gain tuned at freq = 8 ghz by adjusting vg2 0 1 2 3 4 5 6 7 8 9 10 2 4 6 8 10 12 14 16 18 frequency (ghz) nf (db) 0 2 4 6 8 10 12 14 16 18 20 gain (db) nf gain bias conditions: vd = 5 v, id = 75 ma, vg1 = -0.6 v, vg2 = +1.3 v typical www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGA2525 october 2008 ? rev d measured data 0 5 10 15 20 25 30 -10 -8 -6 -4 -2 0 2 4 6 8 10 pin (dbm) pout (dbm), gain (db) 0 25 50 75 100 125 150 id (ma) pout @ 8 ghz gain @ 8 ghz id @ 8 ghz 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) pout (dbm) psat p1db bias conditions: vd = 5 v, id = 75 ma, vg1 = -0.6 v, vg2 = +1.3 v typical www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGA2525 october 2008 ? rev d measured data 0 5 10 15 20 25 30 35 2 4 6 8 10 12 14 16 pout / tone (dbm) otoi (dbm) 8 ghz 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) otoi (dbm) @ pin = -8 dbm vg2 = +1.3v vg2 = -0.42 v vg2 = -0.64 v vg2 = -0.73 v vg2 = -0.80 v bias conditions: vd = 5 v, id = 75 ma, vg1 = -0.6 v, vg2 = +1.3 v typical www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGA2525 october 2008 ? rev d electrical schematic bias procedures turn vd to 0 v turn vg1 to 0 v apply rf signal to input adjust vg2 to obtain desired gain. vg2 to 0 v adjust vg1 more positive until id is 75 ma. this w ill be ~ vg1 = -0.6 v reduce vg1 to -1.5v. ensure id ~ 0 ma vg2 set to +1 v reduce vg2 to +1 v turn off rf supply vg1 set to -1.5 v vd set to +5 v bias-down procedure bias-up procedure TGA2525 rf in rf out vd 100 pf 0.01 uf vg2 100 pf 0.01 uf vg1 0.01 uf 100 pf www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGA2525 october 2008 ? rev d gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing ground is backside of die chip edge to bond pad dimensions are shown to cente r of pad die x,y size tolerance: +/- 0.050 thickness: 0.10 units: millimeters 0.090 x 0.090 vg1 bond pad #6 0.125 x 0.100 vd2 (not used) bond pad #3 0.090 x 0.148 rf out bond pad #5 0.090 x 0.090 vg2 bond pad #2 0.100 x 0.125 vd1 bond pad #4 0.090 x 0.148 rf in bond pad #1 0.000 0.095 1.971 2.091 0.230 0.390 1.242 1.351 0.742 1.208 1.983 0.099 0.968 1.131 1.212 0.104 0.000 1.230 1 2 4 3 5 6 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 11 TGA2525 october 2008 ? rev d gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram rf in rf out vd vg2 vg1 0.01 uf 0.01 uf 100 pf 100 pf 0.01 uf 100 pf www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 12 TGA2525 october 2008 ? rev d gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly notes ordering information component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefe rred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement . ? organic attachment (i.e. epoxy) can be used in low -power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to tempe ratures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is criti cal for long-term reliability. ? devices must be stored in a dry nitrogen atmospher e. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconn ect technique. ? force, time, and ultrasonics are critical parameter s. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ear99 eccn gaas mmic die TGA2525 package style part www.datasheet.net/ datasheet pdf - http://www..co.kr/

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